Bulk acoustic wave resonator comprising a ring

ABSTRACT

An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer; a passivation layer disposed over the second electrode; and a ring disposed between the substrate and the passivation layer

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional patent application under 37 C.F.R. §1.53(b) of commonly owned U.S. patent application Ser. No. 14/526,466and filed on Oct. 28, 2014 (now allowed). This application is also acontinuation-in-part under 37 C.F.R. § 1.53(b) of commonly owned U.S.patent application Ser. No. 13/208,909 to Burak et al. entitled “BulkAcoustic Wave Resonator Comprising Bridge Formed within PiezoelectricLayer,” filed on Aug. 12, 2011 (now granted as U.S. Pat. No. 9,048,812),which is a continuation-in-part of commonly owned U.S. patentapplication Ser. No. 13/151,631 to Dariusz Burak et al., entitled “FilmBulk Acoustic Resonator Comprising a Bridge,” filed on Jun. 2, 2011 (nowgranted as U.S. Pat. No. 9,203,374), which is a continuation-in-partapplication of commonly owned U.S. patent application Ser. No.13/074,262 to Dariusz Burak et al., entitled “Stacked Acoustic ResonatorComprising a Bridge,” filed on Mar. 29, 2011 (now granted as U.S. Pat.No. 9,136,818), which is a continuation-in-part of commonly owned U.S.patent application Ser. No. 13/036,489 to Dariusz Burak, entitled“Coupled Resonator Filter Comprising Bridge” filed on Feb. 28, 2011 (nowgranted as U.S. Pat. No. 9,154,112). The present application claimspriority under 35 U.S.C. § 121 to U.S. patent application Ser. No.14/526,466, the disclosure of which is hereby incorporated by referencein its entirety. The present application also claims priority under 35U.S.C. § 120 to U.S. patent application Ser. Nos. 13/208,909,13/151,631, 13/074,262 and 13/036,489, the disclosures of which arehereby incorporated by reference in their entirety.

BACKGROUND

Electrical resonators are widely incorporated in modern electronicdevices. For example, in wireless communications devices, radiofrequency (RF) and microwave frequency resonators are used as filters,such as ladder filters having electrically connected series and shuntresonators formed in a ladder structure. The filters may be included ina duplexer, for example, connected between a single antenna and areceiver and a transmitter for respectively filtering received andtransmitted signals.

Various types of filters use mechanical resonators, such as bulkacoustic wave (BAW) resonators, including film bulk acoustic resonators(FBARs) and solidly mounted resonators (SMRs), or surface acoustic wave(SAW) resonators. The resonators generally convert electrical signals tomechanical signals or vibrations, and/or mechanical signals orvibrations to electrical signals. A BAW resonator, for example, is anacoustic device comprising a stack that generally includes a layer ofpiezoelectric material between two electrodes. Acoustic waves achieveresonance across the acoustic stack, with the resonant frequency of thewaves being determined by the materials in the acoustic stack and thethickness of each layer (e.g., piezoelectric layer and electrodelayers). One type of BAW resonator includes a piezoelectric film as thepiezoelectric material, which may be referred to as an FBAR as notedabove. FBARs resonate at GHz frequencies, and are thus relativelycompact, having thicknesses on the order of microns and length and widthdimensions of hundreds of microns.

Resonators may be used as band-pass filters with associated passbandsproviding ranges of frequencies permitted to pass through the filters.The passbands of the resonator filters tend to shift in response toenvironmental and operational factors, such as changes in temperatureand/or incident power. For example, the passband of a resonator filtermoves lower in frequency in response to rising temperature and higherincident power.

BRIEF DESCRIPTION OF THE DRAWINGS

The example embodiments are best understood from the following detaileddescription when read with the accompanying drawing figures. It isemphasized that the various features are not necessarily drawn to scale.In fact, the dimensions may be arbitrarily increased or decreased forclarity of discussion. Wherever applicable and practical, like referencenumerals refer to like elements.

FIG. 1A is a top view illustrating a BAW resonator device according to arepresentative embodiment.

FIG. 1B is a cross-sectional diagram illustrating a BAW resonator deviceaccording to a representative embodiment.

FIG. 1C is a cross-sectional diagram illustrating a BAW resonator deviceaccording to a representative embodiment.

FIG. 1D is a graph of resistance at parallel resonance versus width of araised frame element.

FIG. 1E is a graph of resistance at series resonance versus width of araised frame element.

FIGS. 2A-2D are cross-sectional diagrams illustrating BAW resonatordevices according to representative embodiments.

FIGS. 3A-3D are cross-sectional diagrams illustrating BAW resonatordevices according to representative embodiments.

FIGS. 4A-4D are cross-sectional diagrams illustrating BAW resonatordevices according to representative embodiments.

FIGS. 5A-5D are cross-sectional diagrams illustrating BAW resonatordevices according to representative embodiments.

FIGS. 6A-6D are cross-sectional diagrams illustrating BAW resonatordevices according to representative embodiments.

FIGS. 7A-7D are cross-sectional diagrams illustrating BAW resonatordevices according to representative embodiments.

DETAILED DESCRIPTION

In the following detailed description, for purposes of explanation andnot limitation, representative embodiments disclosing specific detailsare set forth in order to provide a thorough understanding of thepresent teachings. However, it will be apparent to one having ordinaryskill in the art having had the benefit of the present disclosure thatother embodiments according to the present teachings that depart fromthe specific details disclosed herein remain within the scope of theappended claims. Moreover, descriptions of well-known apparatuses andmethods may be omitted so as to not obscure the description of therepresentative embodiments. Such methods and apparatuses are clearlywithin the scope of the present teachings.

Relative terms, such as “above,” “below,” “top,” “bottom,” “upper” and“lower” may be used to describe the various elements' relationships toone another, as illustrated in the accompanying drawings. These relativeterms are intended to encompass different orientations of the deviceand/or elements in addition to the orientation depicted in the drawings.For example, if the device were inverted with respect to the view in thedrawings, an element described as “above” another element, for example,would now be “below” that element. Similarly, if the device were rotatedby 90° with respect to the view in the drawings, an element described“above” or “below” another element would now be “adjacent” to the otherelement; where “adjacent” means either abutting the other element, orhaving one or more layers, materials, structures, etc., between theelements.

As used herein a “ring” refers to a combination of a “bridge” and a“cantilevered part;” or a “bridge” alone. A ring is often disposed alongall sides (i.e., along the entire perimeter) of a BAW resonator device,but more generally is disposed along at least one side of a BAWresonator device.

Aspects of the present teachings are relevant to components of BAWresonator devices and filters, their materials and their methods offabrication. Various details of such devices and corresponding methodsof fabrication may be found, for example, in one or more of thefollowing U.S. patent publications: U.S. Pat. No. 6,107,721, to Lakin;U.S. Pat. Nos. 5,587,620, 5,873,153, 6,507,983, 7,388,454, 7,629,865,7,714,684 to Ruby et al.; U.S. Pat. Nos. 7,11,448, 7,791,434, 8,188,810,and 8,230,562 to Fazzio, et al.; U.S. Pat. No. 7,280,007 to Feng et al.;U.S. Pat. No. 8,248,185 to Choy, et al.; U.S. Pat. No. 7,345, 410 toGrannen, et al.; U.S. Pat. No. 6,828,713 to Bradley, et al.; U.S. Pat.No. 7,561,009 to Larson, et al.; U.S. Patent Application Publication No.20120326807 to Choy, et al.; U.S. Pat. No. 8,902,023 to Choy, et al.;U.S. Pat. Nos. 9,243,31 and 8,673,121 to Larson III, et al.; U.S. Pat.No. 8,981,876 to Jamneala et al.; U.S. Pat. No. 9,479,139 to Ruby, etal; U.S. Patent Application Publication No. 2014013212 to John L. LarsonIII; U.S. Pat. No. 9,136,819 to Choy, et al.; U.S. Pat. No. 9,602,073 toChoy, et al.; U.S. Pat. No. 9,455,681 to Feng, et al.; and U.S. Pat. No.9,571,064 to Burak, et al. The entire disclosure of each of the patents,published patent applications and patent application listed above arehereby specifically incorporated by reference herein. It is emphasizedthat the components, materials and method of fabrication described inthese patents and patent applications are representative and othermethods of fabrication and materials within the purview of one ofordinary skill in the art are also contemplated.

According to various embodiments, FIG. 1A is a top view of a BAWresonator device 100 in accordance with a representative embodiment.From FIG. 1A, a planarization layer 104 can be seen disposed over anelectrode (i.e., second electrode 106—not shown in FIG. 1A). The BAWresonator device 100 of FIG. 1A also features a bridge 107 (sometimesreferred to below as first bridge 107), and a cantilevered portion 108.The cantilevered portion 108 is depicted on all sides of the BAWresonator device 100, excepting the side comprising the bridge 107, at aconnection side 150. As described more fully below, in accordance with arepresentative embodiment, in combination, the bridge 107 and thecantilevered portion 108 may be referred to as a ring. In otherrepresentative embodiments, a bridge alone may be referred to as a ring.

According to various embodiments, FIG. 1B is a cross-sectional view ofBAW resonator device 100, which includes a ring, according to arepresentative embodiment.

Referring to FIG. 1B, illustrative BAW resonator device 100 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (not shownin FIG. 1B), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101. An acoustic reflectormay be fabricated according to various techniques, an example of whichis described in U.S. Pat. No. 7,358,831 to Larson, III, et al., which ishereby incorporated by reference.

The piezoelectric layer 105 is formed over the first electrode 103 andthe planarization layer 104.

A planarization layer 104 is provided over the substrate 101, beneaththe piezoelectric layer 105, and abutting a termination of the firstelectrode 103. In certain embodiments described below, the planarizationlayer 104 extends over the cavity 102, causing the termination of thefirst electrode 103 to occur over the cavity 102. Notably, theplanarization layer 104 is optional, but its presence can accord variousbenefits. For instance, the presence of the planarization layer 104tends to improve the structural stability of BAW resonator device 100,may improve the quality of growth of subsequent layers (e.g., thepiezoelectric layer 105), and may allow first electrode 103 to be formedwithout its edges extending beyond the cavity 102. Further examples ofpotential benefits of planarization are presented in U.S. Pat. No.9,525,399 to Burak et al., which is hereby incorporated by reference inits entirety.

A second electrode 106 is provided over the piezoelectric layer 105. Theacoustic stack comprises a first electrode 103, a piezoelectric layer105 and a second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102, or other acoustic reflector such as adistributed Bragg reflector (not shown in FIG. 1B) forms the activeregion of the BAW resonator device 100.

A passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises a first bridge 107 disposed on theconnection side of the BAW resonator device 100. The passivation layer109 also comprises a first cantilevered portion 108 (also known as awing) disposed along one side, if not all sides exception the connectionside of the passivation layer 109. In combination, herein, the firstbridge 107 and the first cantilevered portion 108 may be referred to asa first ring.

The second electrode 106 may be connected on connection side thatcomprises a second bridge 110. The second electrode 106 also comprises asecond cantilevered portion 111 (also known as a wing) disposed along atleast one side, if not all sides exception the connection side of thesecond electrode 106. In combination, herein, the second bridge 110 andthe second cantilevered portion 111 may be referred to as a second ring.The second cantilevered portion 111 is described, for example, in U.S.Patent Application 20120326807 and the second bridge 110 is described,for example, in U.S. Pat. No. 8,248,185 referenced above.

The BAW resonator device 100 also comprises a recessed frame element 120(sometimes referred to as an “innie”) and raised frame element 113(sometimes referred to as an “outie”). The outer edges of the raisedframe element 113 define the active region 112 of BAW resonator device100. As is known, recessed frame element 120 and raised frame element113 provide an acoustic impedance mismatch that serves to fosterreflections of acoustic waves back into active region of the BAWresonator device 100, reducing lost acoustic energy and improving theQ-factor of the BAW resonator device.

As depicted in FIG. 1B, the first cantilevered portion 108 has a width114; the second cantilevered portion 111 has a width 115; thepassivation layer 109 overlaps the second cantilevered portion 111 by adistance 11 (notably, distance 11 depicts the offset of the first andsecond cantilevered portions 108, 111); the raised frame element 113 hasa width 12; the recessed frame element 120 has a width 118; and thepassivation layer 109 overlaps the second bridge 110 by a distance 119(notably, notably, distance 119 depicts the offset of the first andsecond bridges 107, 110). Generally, and as will be appreciated by oneof ordinary skill in the art, the widths 114, 115, 12 and distance 119are selected to optimize the performance of the BAW resonator device100, such as the Q factor. Notably, there are typically four propagatinglongitudinal modes of interest that are supported by the BAW resonatordevice 100 for driving electric field frequencies above the seriesresonance frequency Fs. Generally, the widths 114, 115, 12 and distances11, 119 are selected to suppress excitation of propagating modes thatmay exist in the region between the edge of the second electrode and theouter edge of the cavity 102 (depicted by distance 11) and to suppressexcitation of propagating modes that may exist in the active region 112of the BAW resonator device 100. As should be appreciated by one skilledin the art, combined these modes lead to radiative, viscous and Jouleheating energy losses and therefore lower quality factor Q of the BAWresonator device 100. Typically, the width 114, the width 115 and thewidth 12 may range from 0 um to approximately 10 um. The distance 11 isa difference between the width 115 and the width 114 and there may alsorange from 0 μm to approximately 10 μm.

Additionally, and as described more fully below, it has been found thatcertain improvements in the series resistance (R_(S)) at seriesresonance frequency (F_(S)) are realized by providing the first bridge107, the first cantilevered portion 108, and by the offsetting overlap(distance 11) of the first and second cantilevered portions 108, 111.

The substrate 101 may be formed of various types of semiconductormaterials compatible with semiconductor processes, such as silicon (Si),gallium arsenide (GaAs), indium phosphide (InP), or the like, which isuseful for integrating connections and electronics, thus reducing sizeand cost.

The first electrode 103 comprises one or more electrically conductivematerials, such as various metals compatible with semiconductorprocesses, including tungsten (W), molybdenum (Mo), aluminum (Al),platinum (Pt), ruthenium (Ru), niobium (Nb), or hafnium (Hf), forexample.

The planarization layer 104 illustratively comprises non-etchableborosilicate glass (NEBSG), for example, or other similar material thatis compatible with the function of the BAW resonator device 100, andwithstands the processing steps to form the BAW resonator device 100. Incertain embodiments, planarization layer 104 does not need to be presentin the structure (as it increases overall processing cost), but whenpresent, it may improve quality of growth of subsequent layers andsimplify their processing.

The piezoelectric layer 105 may be formed of a thin film piezoelectriccompatible with semiconductor processes, such as aluminum nitride (AlN),zinc oxide (ZnO), lead zirconium titanate (PZT), or the like. Thepiezoelectric layer 105 may be doped with Scandium, or other rare-earthelement as described above in certain referenced applications. Thethickness of the piezoelectric layer 105 may range from about 1000 Å toabout 100,000 Å, for example, although the thickness may vary to provideunique benefits for any particular situation or to meet applicationspecific design requirements of various implementations, as would beapparent to one of ordinary skill in the art. In an embodiment, thepiezoelectric layer 105 may be formed on a seed layer (not shown)disposed over an upper surface the first electrode 103. For example, theseed layer may be formed of Al to foster growth of an AlN piezoelectriclayer 105. The seed layer may have a thickness in the range of about 50Å to about 5000 Å, for example.

The second electrode 106 is formed over the piezoelectric layer 105. Thesecond electrode 106 is formed of an electrically conductive materialcompatible with semiconductor processes, such as Mo, W, Al, Pt, Ru, Nb,Hf, Cu, or the like. In an embodiment, the second electrode 106 isformed of the same material as the first electrode 103. However, invarious embodiments, the second electrode 106 may be formed of adifferent material than the second electrode 106, without departing fromthe scope of the present teachings.

The passivation layer 109 may be formed of various types of materials,including AlN, silicon carbide (SiC), BSG, SiO₂, SiN, polysilicon, andthe like. Generally, the thickness of the passivation layer 109 must besufficient to insulate all layers of the acoustic stack from theenvironment, including protection from moisture, corrosives,contaminants, debris and the like. The first and second electrodes 103,106 are electrically connected to external circuitry via contact pads(not shown), which may be formed of an electrically conductive material,such as gold, gold-tin alloy or the like.

According to various embodiments, FIG. 1C is a cross-sectional view ofBAW resonator device 100′, which includes a ring comprising a bridge anda cantilevered portion, according to a representative embodiment. Manydetails of the BAW resonator device 100 are common to those of BAWresonator device 100′. Often, these details may not be repeated in orderto avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 1C, illustrative BAW resonator device 100′ includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a an acoustic reflector 102′, such as aDistributed Bragg Reflector, having alternating layers of low and highacoustic impedance materials, formed in the substrate 101. An acousticreflector may be fabricated according to various techniques, an exampleof which is described in U.S. Pat. No. 7,358,831 to Larson, III, et al.,which is hereby incorporated by reference.

A planarization layer 104′ is provided over the substrate 101, beneaththe piezoelectric layer 105, on each side of the acoustic reflector102′, and abutting a termination of the first electrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the acoustic reflector 102′ forms the active regionof the BAW resonator device 100′.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises first bridge 107 disposed on theconnection side of the BAW resonator device 100. The passivation layer109 also comprises first cantilevered portion 108 (also known as a wing)disposed along one side, if not all sides exception the connection sideof the passivation layer 109. In combination, herein, the first bridge107 and the first cantilevered portion 108 may be referred to as a firstring.

The second electrode 106 may be connected on connection side thatcomprises the second bridge 110. The second electrode 106 also comprisesthe second cantilevered portion 111 (also known as a wing) disposedalong at least one side, if not all sides exception the connection sideof the second electrode 106. In combination, herein, the second bridge110 and the second cantilevered portion 111 may be referred to as asecond ring. The second cantilevered portion 111 is described, forexample, in U.S. Patent Application 20120326807 and the second bridge110 is described, for example, in U.S. Pat. No. 8,248,185 referencedabove.

The BAW resonator device 100′ also comprises recessed frame element 120(sometimes referred to as an “innie”) and raised frame element 113(sometimes referred to as an “outie”). As is known, recessed frameelement 120 and raised frame element 113 provide an acoustic impedancemismatch that serves to foster reflections of acoustic waves back intoactive region of the BAW resonator device 100′, reducing lost acousticenergy and improving the Q-factor of the BAW resonator device.

As depicted in FIG. 1C, the first cantilevered portion 108 has width114; the second cantilevered portion 111 has width 115; the passivationlayer 109 overlaps the second cantilevered portion 111 by distance 11(notably, distance 11 depicts the offset of the first and secondcantilevered portions 108, 111); the raised frame element 113 has width12; the active region of BAW resonator device 100′ has width 118; andthe passivation layer 109 overlaps the second bridge 110 by distance 119(notably, distance 119 depicts the offset of the first and secondbridges 107, 110). Generally, and as will be appreciated by one ofordinary skill in the art, the widths 114, 115, 12 and 118 are selectedto optimize the performance of the BAW resonator device 100′, such asthe Q factor. Notably, there are typically four dominant propagatinglongitudinal modes of interest that are supported by the BAW resonatordevice 100′ for driving electric field frequencies above the seriesresonance frequency Fs. Generally, the widths 114, 115, 12 and distances11, 119 are selected to suppress excitation of propagating modes thatmay exist in the region between the second electrode edge and the outeredge of the cavity 102 (distance 11) and to suppress excitation ofpropagating modes that may exist in the active region 112 of the BAWresonator device 100′. As should be appreciated by one skilled in theart, combined these modes lead to radiative, viscous and Joule heatingenergy losses and therefore lower quality factor Q of the BAW resonatordevice 100. Typically, the width 114, the width 115 and the width 12 mayrange from 0 μm to approximately 10 μm. The distance 11 is a differencebetween the width 115 and the width 114 and there may also range from 0μm to approximately 10 μm.

Additionally, and as described more fully below, it has been found thatcertain improvements in the series resistance (R_(S)) at seriesresonance frequency (F_(S)) are realized by providing the first bridge107, the first cantilevered portion 108, and by the offsetting overlap(distance 11) of the first and second cantilevered portions 108, 111.

FIG. 1D is a graph of simulated parallel resistance (R_(p)) at parallelresonance frequency (R_(p)) versus width of a raised frame element.Notably, curve 121 depicts R_(p) of a known BAW resonator devicecomprising a bridge and a cantilevered portion in a second electrode,whereas curve 122 depicts R_(p) of BAW resonator device 100 of FIG. 1Bwith distance 11 set at approximately 1.75 μm. Illustratively, both BAWresonator devices comprised the first electrode 103 formed of Moapproximately 3100 Å thick, the piezoelectric layer 105 formed of AlNapproximately 5000 Å thick, the second electrode formed of Moapproximately 3000 Å thick, and the passivation layer formed of AlNapproximately 2400 Å thick. Notably, the recessed frame element 120 hadbeen skipped in the simulations, and the raised frame element 113 isformed of Mo approximately 1000 Å thick. As can be appreciated, R_(p) isgenerally the same for both BAW resonator devices. As expected, R_(p) isas periodic function of the raised frame element with the period ofapproximately 3 μm.

FIG. 1E is a graph of simulated series resistance (_(S)) at seriesresonance frequency (F_(S)) versus width of a raised frame element.Notably, curve 122 depicts R_(S) of a known BAW resonator devicecomprising a bridge and a cantilevered portion in a second electrode,whereas curve 123 depicts R_(s) of BAW resonator device 100 of FIG. 1Bwith distance 11 set at approximately 1.75 μm. As can be appreciated,R_(S) is generally lower for BAW resonator device 100 as compared to theknown BAW resonator device. As is known, it is desirable to minimizeR_(S) to the extent practical with minimized impact on R_(p). As FIG. 1Edemonstrates, in the illustrative example, lower R_(S) can be achievedby selecting the distance 11 of the first cantilevered portion 108 toapproximately 1.75 μm.

According to various embodiments, FIG. 2A is a cross-sectional view ofBAW resonator device 200, which includes a ring comprising a bridge anda cantilevered portion, according to a representative embodiment. Manydetails of the BAW resonator device 200 are common to those of BAWresonator devices 100, 100′. Often, these details may not be repeated inorder to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 2A, illustrative BAW resonator device 200 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 200.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises first bridge 107 disposed on theconnection side of the BAW resonator device 100. The passivation layer109 also comprises first cantilevered portion 108 (also known as a wing)disposed along one side, if not all sides exception the connection sideof the passivation layer 109. In combination, herein, the first bridge107 and the first cantilevered portion 108 may be referred to as a firstring.

The second electrode 106 may be connected on connection side thatcomprises a filled second bridge 110′. The second electrode 106 alsocomprises a filled second cantilevered portion 111′ (also known as afilled wing) disposed along at least one side, if not all sidesexception the connection side of the second electrode 106. Incombination, herein, the filled second bridge 110′ and the filled secondcantilevered portion 111′ may be referred to as a filled second ring.The filled second cantilevered portion 111′ is described, for example,in U.S. Patent Application 20120326807 and the filled second bridge 110′is described, for example, in U.S. Pat. No. 8,248,185 referenced above.

In the depicted embodiment, the filled second bridge 110′ and the filledsecond cantilevered portion 111′ are filled with a dielectric material.The dielectric material is selected for its acoustic properties and forits ability to withstand processing steps used to fabricate the BAWresonator device 200. Notably, the dielectric material has an acousticimpedance in order to provide significantly large lateral acousticimpedance discontinuity at the boundary of the active region of BAWresonator device 200. The mechanism of reducing losses in the filledsecond bridge 110′ relies on suppression and confinement of thepropagating eigenmodes which are mechanically excited at the perimeterof the active region of the BAW resonator device 200 as a part of pistonmode excitation. Both ends of the filled second bridge 110′ providemechanical discontinuities to control the phase of the reflected modeand to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled second bridge 110′ andthe filled second cantilevered portion 111′ is selected to surviveetching steps used to form various features of the BAW resonator device200, such as the cavity 102, the first bridge 107, and the firstcantilevered portion 108. Illustratively, the dielectric material usedto fill the filled second bridge 110′ and the filled second cantileveredportion 111′ comprises one of non-etchable borosilicate glass (NEBSG),carbon doped silicon dioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 2B is a cross-sectional view ofBAW resonator device 201, which includes a ring comprising a bridge anda cantilevered portion, according to a representative embodiment. Manydetails of the BAW resonator device 201 are common to those of BAWresonator devices 100, 100′, 201. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 2B, illustrative BAW resonator device 201 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises a filled first bridge 107′ disposed onthe connection side of the BAW resonator device 100. The passivationlayer 109 also comprises a filled first cantilevered portion 108′ (alsoknown as a filled wing) disposed along one side, if not all sidesexception the connection side of the passivation layer 109. Incombination, herein, the filled first bridge 107′ and the filled firstcantilevered portion 108′ may be referred to as a filled first ring.

The second electrode 106 may be connected on connection side thatcomprises filled second bridge 110′. The second electrode 106 alsocomprises filled second cantilevered portion 111′ (also known as afilled wing) disposed along at least one side, if not all sidesexception the connection side of the second electrode 106. Incombination, herein, the filled second bridge 110′ and the filled secondcantilevered portion 111′ may be referred to as filled second ring.

The dielectric material used to fill the filled first bridge 107′,filled second bridge 110′, filled second bridge 110′, and the filledsecond cantilevered portion 111′ is selected to survive etching stepsused to form various features of the BAW resonator device 201, such asthe cavity 102. Illustratively, the dielectric material used to fill thefilled first bridge 107′, filled second bridge 110′, filled firstcantilevered portion 108′, and the filled second cantilevered portion111′ comprises one of non-etchable borosilicate glass (NEBSG), carbondoped silicon dioxide (CDO), or silicon carbide (SiC). As noted above,the dielectric material is selected for its acoustic properties and forits ability to withstand processing steps used to fabricate the BAWresonator device 201. Notably, the dielectric material has an acousticimpedance in order to provide significantly large lateral acousticimpedance discontinuity at the boundary of the active region of BAWresonator device 200. The mechanism of reducing losses in filled firstbridge 107′ and filled second bridge 110′ relies on suppression andconfinement of the propagating eigenmodes which are mechanically excitedat the perimeter of the active region of the BAW resonator device 201 asa part of piston mode excitation. Both ends of each of the filled firstbridge 107′ and the filled second bridge 110′ provide mechanicaldiscontinuities to control the phase of the reflected mode and toprovide overall beneficial suppression of the propagating eigenmodes inthe active region.

According to various embodiments, FIG. 2B is a cross-sectional view ofBAW resonator device 201, which includes a ring comprising a bridge anda cantilevered portion, according to a representative embodiment. Manydetails of the BAW resonator device 201 are common to those of BAWresonator devices 100, 100′, 200. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 2C, illustrative BAW resonator device 203 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises a filled first bridge 107′ disposed onthe connection side of the BAW resonator device 100. The passivationlayer 109 also comprises a filled first cantilevered portion 108′ (alsoknown as a filled wing) disposed along one side, if not all sidesexception the connection side of the passivation layer 109. Incombination, herein, the filled first bridge 107′ and the filled firstcantilevered portion 108′ may be referred to as a filled first ring.

The second electrode 106 may be connected on connection side thatcomprises second bridge 110. The second electrode 106 also comprisessecond cantilevered portion 111 (also known as a wing) disposed along atleast one side, if not all sides exception the connection side of thesecond electrode 106. In combination, herein, the second bridge 110 andthe second cantilevered portion 111 may be referred to as the secondring.

The dielectric material used to fill the filled first bridge 107′,filled second bridge 110′ is selected to survive etching steps used toform various features of the BAW resonator device 203, such as thecavity 102, second bridge, and the second cantilevered portion 111.Illustratively, the dielectric material used to fill the filled firstbridge 107′, filled second bridge 110′ comprises one of non-etchableborosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), orsilicon carbide (SiC). As noted above, the dielectric material isselected for its acoustic properties and for its ability to withstandprocessing steps used to fabricate the BAW resonator device 203.Notably, the dielectric material has an acoustic impedance in order toprovide significantly large lateral acoustic impedance discontinuity atthe boundary of the active region of BAW resonator device 203. Themechanism of reducing losses in filled first bridge 107′ relies onsuppression and confinement of the propagating eigenmodes which aremechanically excited at the perimeter of the active region of the BAWresonator device 203 as a part of piston mode excitation. Both ends ofthe first filled bridge 107′ provide mechanical discontinuities tocontrol the phase of the reflected mode and to provide overallbeneficial suppression of the propagating eigenmodes in the activeregion.

According to various embodiments, FIG. 3A is a cross-sectional view ofBAW resonator device 300, which includes a ring comprising a bridge anda cantilevered portion, and a bridge alone, according to arepresentative embodiment. Many details of the BAW resonator device 300are common to those of BAW resonator devices 100, 100′ and 200˜203.Often, these details may not be repeated in order to avoid obscuring thedescription of the presently described representative embodiments.

Referring to FIG. 3A, illustrative BAW resonator device 300 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 300.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises first bridge 107 disposed on theconnection side of the BAW resonator device 100. The passivation layer109 also comprises first cantilevered portion 108 (also known as a wing)disposed along one side, if not all sides exception the connection sideof the passivation layer 109. In combination, herein, the first bridge107 and the first cantilevered portion 108 may be referred to as a firstring.

The piezoelectric layer 105 is disposed over a second bridge 310, thefirst electrode 103 and the planarization layer 104. The second bridge310 is filled with air, and is disposed along at least one side, if notall sides of the piezoelectric layer 105. Notably, the second bridge 310may be referred to as a second ring.

According to various embodiments, FIG. 3B is a cross-sectional view ofBAW resonator device 301, which includes a ring, which includes a ringcomprising a bridge and a cantilevered portion, and a bridge alone,according to a representative embodiment. Many details of the BAWresonator device 301 are common to those of BAW resonator devices 100,100′, 200˜203, and 300. Often, these details may not be repeated inorder to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 3B, illustrative BAW resonator device 301 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 301.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises filled first bridge 107′ disposed on theconnection side of the BAW resonator device 301. The passivation layer109 also comprises filled first cantilevered portion 108′ (also known asa filled wing) disposed along one side, if not all sides exception theconnection side of the passivation layer 109. In combination, herein,the filled first bridge 107′ and the filled first cantilevered portion108′ may be referred to as a filled first ring.

The piezoelectric layer 105 is disposed over a filled second bridge310′, the first electrode 103 and the planarization layer 104. Thefilled second bridge 310′ is disposed along at least one side, if notall sides of the piezoelectric layer 105. The filled second bridge 310′may be referred to as a filled second ring.

In the depicted embodiment, the filled first bridge 107′, the filledfirst cantilevered portion 108′ and the filled second bridge 310′ arefilled with a dielectric material. The dielectric material is selectedfor its acoustic properties and for its ability to withstand processingsteps used to fabricate the BAW resonator device 301. Notably, thedielectric material has an acoustic impedance in order to providesignificantly large lateral acoustic impedance discontinuity at theboundary of the active region of BAW resonator device 301. The mechanismof reducing losses in the filled first bridge 107′, the filled firstcantilevered portion 108′ and the filled second bridge 310′ relies onsuppression and confinement of the propagating eigenmodes which aremechanically excited at the perimeter of the active region of the BAWresonator device 301 as a part of piston mode excitation. Both ends ofeach of the filled first bridge 107′ and the filled second bridge 310′provide mechanical discontinuities to control the phase of the reflectedmode and to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled first bridge 107′, thefilled first cantilevered portion 108′ and the filled second bridge 310′is selected to survive etching steps used to form various features ofthe BAW resonator device 301, such as the cavity 102. Illustratively,the dielectric material used to fill the filled second bridge 310′comprises one of non-etchable borosilicate glass (NEBSG), carbon dopedsilicon dioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 3C is a cross-sectional view ofBAW resonator device 302, which includes a ring comprising a bridge anda cantilevered portion, and a bridge alone, according to arepresentative embodiment. Many details of the BAW resonator device 302are common to those of BAW resonator devices 100, 100′, 200˜203, 300,and 301. Often, these details may not be repeated in order to avoidobscuring the description of the presently described representativeembodiments.

Referring to FIG. 3C, illustrative BAW resonator device 302 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 302.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises first bridge 107 disposed on theconnection side of the BAW resonator device 302. The passivation layer109 also comprises first cantilevered portion 108 (also known as a wing)disposed along one side, if not all sides exception the connection sideof the passivation layer 109. In combination, herein, the first bridge107 and the filled first cantilevered portion 108′ may be referred to asa first ring.

The piezoelectric layer 105 is disposed over a filled second bridge310′, the first electrode 103 and the planarization layer 104. Thefilled second bridge 310′ is disposed along at least one side, if notall sides of the piezoelectric layer 105. The filled second bridge 310′may be referred to as a filled second ring.

In the depicted embodiment, the filled second bridge 310′ is filled witha dielectric material. The dielectric material is selected for itsacoustic properties and for its ability to withstand processing stepsused to fabricate the BAW resonator device 302. Notably, the dielectricmaterial has an acoustic impedance in order to provide significantlylarge lateral acoustic impedance discontinuity at the boundary of theactive region of BAW resonator device 302. The mechanism of reducinglosses in the filled second bridge 310′ relies on suppression andconfinement of the propagating eigenmodes which are mechanically excitedat the perimeter of the active region of the BAW resonator device 302 asa part of piston mode excitation. Both ends of the filled second bridge310′ provide mechanical discontinuities to control the phase of thereflected mode and to provide overall beneficial suppression of thepropagating eigenmodes in the active region.

The dielectric material used to fill the filled second bridge 310′ isselected to survive etching steps used to form various features of theBAW resonator device 302, such as the cavity 102, the first bridge 107,and the first cantilevered portion 108. Illustratively, the dielectricmaterial used to fill the filled second bridge 110′ and the filledsecond cantilevered portion 111′ comprises one of non-etchableborosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), orsilicon carbide (SiC).

According to various embodiments, FIG. 3D is a cross-sectional view ofBAW resonator device 303, which includes a ring comprising a bridge anda cantilevered portion, and a bridge alone, according to arepresentative embodiment. Many details of the BAW resonator device 303are common to those of BAW resonator devices 100, 100′, 200˜203, and300˜302. Often, these details may not be repeated in order to avoidobscuring the description of the presently described representativeembodiments.

Referring to FIG. 3D, illustrative BAW resonator device 303 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 303.

The passivation layer 109 is disposed over the second electrode 106. Thepassivation layer 109 comprises filled first bridge 107′ disposed on theconnection side of the BAW resonator device 100. The passivation layer109 also comprises filled first cantilevered portion 108′ (also known asa filled wing) disposed along one side, if not all sides exception theconnection side of the passivation layer 109. In combination, herein,the filled first bridge 107′ and the filled first cantilevered portion108′ may be referred to as a filled first ring.

The piezoelectric layer 105 is deposited over the second bridge 310, thefirst electrode 103 and the planarization layer 104. The second bridge310 is disposed along at least one side, if not all sides of thepiezoelectric layer 105. The second bridge 310 may be referred to as asecond ring.

In the depicted embodiment, the filled first bridge 107′ and the filledfirst cantilevered portion 108′ are filled with a dielectric material.The dielectric material is selected for its acoustic properties and forits ability to withstand processing steps used to fabricate the BAWresonator device 303. Notably, the dielectric material has an acousticimpedance in order to provide significantly large lateral acousticimpedance discontinuity at the boundary of the active region of BAWresonator device 303. The mechanism of reducing losses in the filledfirst bridge 107′ and the filled first cantilevered portion 108′ relieson suppression and confinement of the propagating eigenmodes which aremechanically excited at the perimeter of the active region of the BAWresonator device 303 as a part of piston mode excitation. Both ends ofthe filled first bridge 107′ provide mechanical discontinuities tocontrol the phase of the reflected mode and to provide overallbeneficial suppression of the propagating eigenmodes in the activeregion.

The dielectric material used to fill the filled first bridge 107′ andthe filled first cantilevered portion 108′ is selected to surviveetching steps used to form various features of the BAW resonator device303, such as the cavity 102 and the second bridge 310. Illustratively,the dielectric material used to fill the filled second bridge 110′ andthe filled second cantilevered portion 111′ comprises one ofnon-etchable borosilicate glass (NEBSG), carbon doped silicon dioxide(CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 4A is a cross-sectional view ofBAW resonator device 400, which includes a ring comprising a bridge,according to a representative embodiment. Many details of the BAWresonator device 400 are common to those of BAW resonator devices 100,100′, 200˜203, and 300˜303. Often, these details may not be repeated inorder to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 4A, illustrative BAW resonator device 400 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 400.

Although not shown in FIG. 4A, the BAW resonator device 400 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 400, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The passivation layer 109 is disposed over the second electrode 106.Unlike certain representative embodiments described above, thepassivation layer 109 does not feature a ring, filled or unfilled.Rather, BAW resonator device 400 comprises a bridge 410 (that may bereferred to as a ring) disposed in the first electrode 103. The bridge410 may be formed at a mid-point of the thickness of the first electrode103, or elsewhere within the first electrode 103. The bridge 410 isfilled with air, and is disposed along at least a portion of a perimeteralong of an active region of the BAW resonator device 400. Notably, thebridge 410 provides an acoustic impedance discontinuity, in essenceacoustically terminating the contacting overlap of the first electrode103, the piezoelectric layer 105 and the second electrode 106, whichdefines the active region of the BAW resonator device 400. As such, thebridge 410 defines the perimeter of the active region of BAW resonatordevice 400.

As will be appreciated by one of ordinary skill in the art, by providingthe bridge 410 in the first electrode 103, the surface of the firstelectrode 103 is used to form the piezoelectric layer 105. This resultsin the growth of a highly textured piezoelectric layer having awell-defined crystalline orientation. As such, the piezoelectric layer105 as a comparatively improved piezoelectric coupling coefficient(e₃₃), and, as a result, has a comparatively improved couplingcoefficient (kt²), when compared to a piezoelectric layer formed overbridges provided beneath the piezoelectric layer 105 (e.g., secondbridges 310, 310′). Additionally, providing the bridge 410 in the firstelectrode results in protecting the piezoelectric layer 105 frompossible diffusion of elements used to form sacrificial layer definingbridge 410, which may adversely increase viscous loss in thepiezoelectric layer deposited over the bridge 410.

According to various embodiments, FIG. 4B is a cross-sectional view ofBAW resonator device 401, which includes a ring comprising a bridge,according to a representative embodiment. Many details of the BAWresonator device 401 are common to those of BAW resonator devices 100,100′, 200˜203, 300˜303, and 400. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 4B, illustrative BAW resonator device 401 includesacoustic stack formed over substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 401.

Although not shown in FIG. 4B, the BAW resonator device 401 may alsocomprises recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is know, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 401, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The passivation layer 109 is disposed over the second electrode 106.Unlike representative embodiments described above, the passivation layerdoes not feature a ring, filled or unfilled. Rather, BAW resonatordevice 401 comprises a filled bridge 410′ (sometimes referred to belowas filled second bridge 410′) disposed in the first electrode 103. Thefilled bridge 410′ may be formed at a mid-point of the thickness of thefirst electrode 103, or elsewhere within the first electrode 103. Thefilled bridge 410′ is filled with a dielectric material, and is disposedalong at least a portion of a perimeter along of an active region of theBAW resonator device 401. Notably, the filled bridge 410′ provides anacoustic impedance discontinuity, in essence terminating the contactingoverlap of the first electrode 103, the piezoelectric layer 105 and thesecond electrode 106, which defines the active region of the BAWresonator device 401. Notably, the dielectric material provided in thefilled bridge 410′ has an acoustic impedance in order to providesignificantly large lateral acoustic impedance discontinuity at theboundary of the active region of BAW resonator device 401. The mechanismof reducing losses in the filled bridge 410′ relies on suppression andconfinement of the propagating eigenmodes which are mechanically excitedat the perimeter of the active region of the BAW resonator device 401 asa part of piston mode excitation. Both ends of the filled bridge 410′provide mechanical discontinuities to control the phase of the reflectedmode and to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled bridge 410′ is selectedto survive etching steps used to form various features of the BAWresonator device 401, such as the cavity 102. Illustratively, thedielectric material used to fill the filled second bridge 110′ and thefilled second cantilevered portion 111′ comprises one of non-etchableborosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), orsilicon carbide (SiC).

As will be appreciated by one of ordinary skill in the art, by providingthe filled bridge 410′ in the first electrode 103, the surface of thefirst electrode 103 is used to form the piezoelectric layer 105. Thisresults in protecting the piezoelectric layer 105 from possiblediffusion of elements used to form filled second bridge 410′, which mayadversely increase viscous loss in the piezo-electric layer depositedover the filled second bridge 410′ region.

As depicted in FIG. 4B, the first electrode 103 terminates over thecavity 102 at a termination point 420, and the planarization layer 104extends over the cavity 102 to abut the first electrode 103 at thetermination point 420. As will be appreciated by one of ordinary skillin the art, if the first electrode terminated over the substrate 101,because the filled bridge 410′ is filled with dielectric material,acoustic waves would propagate through the filled bridge 410′ and intothe substrate 101. Thus, the filled second bridge 410′, would allowacoustic energy transfer into the substrate 101, where it would be lost,resulting in a reduced Q-factor. By contrast, because the firstelectrode 103 terminates over the air-filled cavity, an acousticimpedance discontinuity, acoustic energy is reflected back into theactive region of the BAW resonator device 401.

According to various embodiments, FIG. 4C is a cross-sectional view ofBAW resonator device 402, which includes a ring comprising a bridge anda cantilevered portion, according to a representative embodiment. Manydetails of the BAW resonator device 402 are common to those of BAWresonator devices 100, 100′, 200˜203, 300˜303 and 400˜401. Often, thesedetails may not be repeated in order to avoid obscuring the descriptionof the presently described representative embodiments.

Referring to FIG. 4C, illustrative BAW resonator device 402 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 402.

Although not shown in FIG. 4C, the BAW resonator device 402 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is know, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 402, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The passivation layer 109 is disposed over the second electrode 106.Unlike certain representative embodiments described above, thepassivation layer does not feature a ring, filled or unfilled. Rather,BAW resonator device 402 comprises a bridge 407 (sometimes referred tobelow as a first bridge) disposed in the second electrode 106. The BAWresonator device also comprises a cantilevered portion 408 (also knownas a wing) disposed along one side, if not all sides exception theconnection side of the passivation layer 109. In combination, herein,the bridge 407 and the cantilevered portion 408 may be referred to as aring.

The bridge 407 and the cantilevered portion 408 may be formed at amid-point of the thickness of the first electrode 103, or elsewherewithin the first electrode 103. The bridge 407 and the cantileveredportion 408 are filled with air, and is disposed along at least aportion of a perimeter along of an active region of the BAW resonatordevice 402. Notably, the bridge 407 and the cantilevered portion 408provide an acoustic impedance discontinuity, in essence acousticallyterminating the contacting overlap of the first electrode 103, thepiezoelectric layer 105 and the second electrode 106, which defines theactive region of the BAW resonator device 402. As such, the bridge 407and the cantilevered portion define the perimeter of the active regionof BAW resonator device 402.

According to various embodiments, FIG. 4D is a cross-sectional view ofBAW resonator device 403, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 403are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, and 400˜402. Often, these details may not be repeated in orderto avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 4D, illustrative BAW resonator device 403 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 403.

Although not shown in FIG. 4D, the BAW resonator device 403 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 403, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The passivation layer 109 is disposed over the second electrode 106.Unlike certain representative embodiments described above, thepassivation layer does not feature a ring, filled or unfilled. Rather,BAW resonator device 403 comprises a filled bridge 407′ (sometimesreferred to below as a filled first bridge) and filled cantileveredportion 408′ disposed in the second electrode 106. In combination, thefilled bridge 407′ and the filled cantilevered portion 408′ provide afilled ring.

The filled bridge 407′ and the filled cantilevered portion 408′ may beformed at a mid-point of the thickness of the first electrode 103, orelsewhere within the first electrode 103. The filled bridge 407′ and thefilled cantilevered portion 408′ are filled with a dielectric material,and is disposed along at least a portion of a perimeter along of anactive region of the BAW resonator device 403. Notably, the filledbridge 407′ provides an acoustic impedance discontinuity, in essenceterminating the contacting overlap of the first electrode 103, thepiezoelectric layer 105 and the second electrode 106, which defines theactive region of the BAW resonator device 401. Notably, the dielectricmaterial provided in the filled bridge 407′ and the cantilevered portion408 has an acoustic impedance in order to provide significantly largelateral acoustic impedance discontinuity at the boundary of the activeregion of BAW resonator device 403. The mechanism of reducing losses inthe filled bridge 407′ relies on suppression and confinement of thepropagating eigenmodes which are mechanically excited at the perimeterof the active region of the BAW resonator device 403 as a part of pistonmode excitation. Both ends of the filled bridge 407′ and the filledcantilevered portion 408′ provide mechanical discontinuities to controlthe phase of the reflected mode and to provide overall beneficialsuppression of the propagating eigenmodes in the active region.

The dielectric material used to fill the filled bridge 407′ and thefilled cantilevered portion 408′ is selected to survive etching stepsused to form various features of the BAW resonator device 302, such asthe cavity 102. Illustratively, the dielectric material used to fill thefilled bridge 407′ and the filled cantilevered portion 408′ comprisesone of non-etchable borosilicate glass (NEBSG), carbon doped silicondioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 5A is a cross-sectional view ofBAW resonator device 500, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 500are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, and 400˜403. Often, these details may not be repeated in orderto avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 5A, illustrative BAW resonator device 500 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 403.

Although not shown in FIG. 5A, the BAW resonator device 500 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is know, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 500, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a first bridge 507. The second electrode 106 also comprises acantilevered portion 508 (also known as a wing) disposed along at leastone side, if not all sides exception the connection side of the secondelectrode 106. In combination, herein, the first bridge 507 and thecantilevered portion 508 may be referred to as a first ring. The secondcantilevered portion 111 is described, for example, in U.S. PatentApplication 20120326807 and the second bridge 110 is described, forexample, in U.S. Pat. No. 8,248,185 referenced above.

BAW resonator device 500 comprises a second bridge 510 disposed in thefirst electrode 103. The second bridge 510 may be formed at a mid-pointof the thickness of the first electrode 103, or elsewhere within thefirst electrode 103. The second bridge 510 is filled with air, and isdisposed along at least a portion of a perimeter along of an activeregion of the BAW resonator device 500. Notably, the inner edge of mostinwardly extending the first bridge 507 and the second bridge 510provides an acoustic impedance discontinuity, in essence acousticallyterminating the contacting overlap of the first electrode 103, thepiezoelectric layer 105 and the second electrode 106, which defines theactive region of the BAW resonator device 500. According to therepresentative embodiment shown in FIG. 5A, the second bridge 510defines the perimeter of the active region of BAW resonator device 500.

According to various embodiments, FIG. 5B is a cross-sectional view ofBAW resonator device 501, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 501are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403 and 500. Often, these details may not be repeated inorder to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 5B, illustrative BAW resonator device 501 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 501.

Although not shown in FIG. 5B, the BAW resonator device 501 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 501, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a first bridge 507. The second electrode 106 also comprises acantilevered portion 508 (also known as a wing) disposed along at leastone side, if not all sides exception the connection side of the secondelectrode 106. In combination, herein, the first bridge 507 and thecantilevered portion 508 may be referred to as a first ring. The secondcantilevered portion 111 is described, for example, in U.S. PatentApplication 20120326807 and the second bridge 110 is described, forexample, in U.S. Pat. No. 8,248,185 referenced above.

BAW resonator device 501 comprises a filled second bridge 510′ disposedin the first electrode 103. The filled second bridge 510′ may be formedat a mid-point of the thickness of the first electrode 103, or elsewherewithin the first electrode 103. The filled second bridge 510′ may beformed at a mid-point of the thickness of the first electrode 103, orelsewhere within the first electrode 103. The filled second bridge 510′is filled with a dielectric material, and is disposed along at least aportion of a perimeter along of an active region of the BAW resonatordevice 501. Notably, the inner edge of most inwardly extending the firstbridge 507 and the filled second bridge 510′ provides an acousticimpedance discontinuity, in essence terminating the contacting overlapof the first electrode 103, the piezoelectric layer 105 and the secondelectrode 106, which defines the active region of the BAW resonatordevice 501. Notably, the dielectric material provided in the filledsecond bridge 510′ has an acoustic impedance in order to providesignificantly large lateral acoustic impedance discontinuity at theboundary of the active region of BAW resonator device 501. The mechanismof reducing losses in the filled second bridge 510′ relies onsuppression and confinement of the propagating eigenmodes which aremechanically excited at the perimeter of the active region of the BAWresonator device 501 as a part of piston mode excitation. Both ends ofthe first bridge 507 and the filled second bridge 510′ providemechanical discontinuities to control the phase of the reflected modeand to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled second bridge 510′ isselected to survive etching steps used to form various features of theBAW resonator device 501, such as the cavity 102. Illustratively, thedielectric material used to fill the filled second bridge 510′ comprisesone of non-etchable borosilicate glass (NEBSG), carbon doped silicondioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 5C is a cross-sectional view ofBAW resonator device 502, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 502are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403 and 500˜501. Often, these details may not be repeatedin order to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 5C, illustrative BAW resonator device 502 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 502.

Although not shown in FIG. 5C, the BAW resonator device 502 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 502, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a filled first bridge 507′. The second electrode 106 alsocomprises a filled cantilevered portion 508′ (also known as a wing)disposed along at least one side, if not all sides exception theconnection side of the second electrode 106. The filled first bridge507′ is filled with a dielectric material, and is disposed along atleast a portion of a perimeter along of an active region of the BAWresonator device 502. In combination, herein, the filled first bridge507′ and the filled cantilevered portion 508′ may be referred to as afilled first ring.

BAW resonator device 500 comprises filled second bridge 510′ disposed inthe first electrode 103. The filled second bridge 510′ may be formed ata mid-point of the thickness of the first electrode 103, or elsewherewithin the first electrode 103. The filled second bridge 510′ may beformed at a mid-point of the thickness of the first electrode 103, orelsewhere within the first electrode 103. The filled second bridge 510′is filled with a dielectric material, and is disposed along at least aportion of a perimeter along of an active region of the BAW resonatordevice 501.

As depicted in FIG. 5C, the first electrode 103 terminates over thecavity 102 at a termination point 520, and the planarization layer 104extends over the cavity 102 to abut the first electrode 103 at thetermination point 520. As will be appreciated by one of ordinary skillin the art, if the first electrode terminated over the substrate 101,because the filled second bridge 510′ is filled with dielectricmaterial, acoustic waves would propagate through the filled secondbridge 510′ and into the substrate 101. Thus, the filled second bridge510′, would allow acoustic energy transfer into the substrate 101, whereit would be lost, resulting in a reduced Q-factor. By contrast, becausethe first electrode 103 terminates over the air-filled cavity, anacoustic impedance discontinuity, acoustic energy is reflected back intothe active region of the BAW resonator device 502.

Notably, the inner edge of most inwardly extending part of the filledfirst bridge 507′ and the filled second bridge 510′ provide acousticimpedance discontinuities, in essence terminating the contacting overlapof the first electrode 103, the piezoelectric layer 105 and the secondelectrode 106, which defines the active region of the BAW resonatordevice 502. Notably, the dielectric material provided in the filledfirst bridge 507′ and the filled second bridge 510′ has an acousticimpedance in order to provide significantly large lateral acousticimpedance discontinuity at the boundary of the active region of BAWresonator device 502. The mechanism of reducing losses in the filledfirst bridge 507′ and the filled second bridge 510′ relies onsuppression and confinement of the propagating eigenmodes which aremechanically excited at the perimeter of the active region of the BAWresonator device 502 as a part of piston mode excitation. Both ends ofeach of the filled first bridge 507′ and the filled second bridge 510′provide mechanical discontinuities to control the phase of the reflectedmode and to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled second bridge 510′ isselected to survive etching steps used to form various features of theBAW resonator device 502, such as the cavity 102. Illustratively, thedielectric material used to fill the filled second bridge 510′ comprisesone of non-etchable borosilicate glass (NEBSG), carbon doped silicondioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 5D is a cross-sectional view ofBAW resonator device 503, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 502are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403 and 500˜502. Often, these details may not be repeatedin order to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 5D, illustrative BAW resonator device 503 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 503.

Although not shown in FIG. 5D, the BAW resonator device 503 may alsocomprises recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is know, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 503, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a filled first bridge 507′. The second electrode 106 alsocomprises a filled cantilevered portion 508′ (also known as a wing)disposed along at least one side, if not all sides exception theconnection side of the second electrode 106. The filled second bridge510′ is filled with a dielectric material, and is disposed along atleast a portion of a perimeter along of an active region of the BAWresonator device 501. In combination, herein, the filled first bridge507′ and the filled cantilevered portion 508′ may be referred to as afilled first ring.

BAW resonator device 503 comprises second bridge 510 disposed in thefirst electrode 103. The second bridge 510 may be formed at a mid-pointof the thickness of the first electrode 103, or elsewhere within thefirst electrode 103. The second bridge 510 may be formed at a mid-pointof the thickness of the first electrode 103, or elsewhere within thefirst electrode 103. The second bridge 510 is filled with air, and isdisposed along at least a portion of a perimeter along of an activeregion of the BAW resonator device 503.

Notably, the inner edge of most inwardly extending portion of the filledfirst bridge 507′ and the second bridge 510 provide acoustic impedancediscontinuities, in essence terminating the contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106, which defines the active region of the BAW resonatordevice 501. Notably, the dielectric material provided in the filledfirst bridge 507′ and the air provided in the second bridge 510 eachhave an acoustic impedance in order to provide significantly largelateral acoustic impedance discontinuity at the boundary of the activeregion of BAW resonator device 503. The mechanism of reducing losses inthe filled first bridge 507′ and the second bridge 510 relies onsuppression and confinement of the propagating eigenmodes which aremechanically excited at the perimeter of the active region of the BAWresonator device 503 as a part of piston mode excitation. Both ends ofeach of the filled first bridge 507′ and the second bridge 510 providemechanical discontinuities to control the phase of the reflected modeand to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled first bridge 507′ andthe filled cantilevered portion 508′ is selected to survive etchingsteps used to form various features of the BAW resonator device 501,such as the cavity 102, and second bridge 510. Illustratively, thedielectric material used to fill the filled first bridge 507′ and thefilled cantilevered portion 508′ comprises one of non-etchableborosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), orsilicon carbide (SiC).

According to various embodiments, FIG. 6A is a cross-sectional view ofBAW resonator device 600, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 600are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403 and 500˜503. Often, these details may not be repeatedin order to avoid obscuring the description of the presently describedrepresentative embodiments.

Referring to FIG. 6A, illustrative BAW resonator device 600 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 600.

Although not shown in FIG. 6A, the BAW resonator device 600 may alsocomprise a recessed frame element (sometimes referred to as an “innie”)and a raised frame element (sometimes referred to as an “outie”)provided in the second electrode 106. As is know, recessed frame elementand raised frame element provide an acoustic impedance mismatch thatserves to foster reflections of acoustic waves back into active regionof the BAW resonator device 600, reducing lost acoustic energy andimproving the Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a first bridge 607. The first bridge 607 is disposed along atleast a portion of a perimeter along of an active region of the BAWresonator device 600. The second electrode 106 also comprises acantilevered portion 608. The first bridge 607 and the cantileveredportion 608 are filled with air, and in combination may be referred toas a ring. The first bridge 607 and the cantilevered portion 608 mayeach be formed at a mid-point of the thickness of the second electrode106, or elsewhere within the second electrode 106.

BAW resonator device 600 comprises a second bridge 610 disposed in thefirst electrode 103. The second bridge 610 may be formed at a mid-pointof the thickness of the first electrode 103, or elsewhere within thefirst electrode 103. The second bridge 610 is filled with air, and isdisposed along at least a portion of a perimeter along of an activeregion of the BAW resonator device 600. Notably, the inner edge of mostinwardly extending portion of the first bridge 607 and the cantileveredportion 608, and the second bridge 610 provide an acoustic impedancediscontinuity, in essence acoustically terminating the contactingoverlap of the first electrode 103, the piezoelectric layer 105 and thesecond electrode 106, which defines the active region of the BAWresonator device 600. As such, the inner edge of most inwardly extendingportion of the first bridge 607, the cantilevered portion 608, and thesecond bridge 610 define the perimeter of the active region of BAWresonator device 600.

According to various embodiments, FIG. 6B is a cross-sectional view ofBAW resonator device 601, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 601are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503 and 600. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 6B, illustrative BAW resonator device 601 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 403.

Although not shown in FIG. 6B, the BAW resonator device 601 may alsocomprise a recessed frame element (sometimes referred to as an “innie”)and a raised frame element (sometimes referred to as an “outie”)provided in the second electrode 106. As is know, a recessed frameelement and a raised frame element provide an acoustic impedancemismatch that serves to foster reflections of acoustic waves back intoactive region of the BAW resonator device 601, reducing lost acousticenergy and improving the Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises the first bridge 607 that is disposed along at least a portionof a perimeter along of an active region of the BAW resonator device601, and may be referred to as a first ring. The second electrode 106also comprises the cantilevered portion 608. The first bridge 607 andthe cantilevered portion 608 may be formed at a mid-point of thethickness of the second electrode 106, or elsewhere within the secondelectrode 106.

BAW resonator device 601 comprises a filled second bridge 610′ disposedin the piezoelectric layer 105 between the first electrode 103 and thepiezoelectric layer 105. The filled second bridge 610′ is filled with adielectric material, and is disposed along at least a portion of aperimeter along of an active region of the BAW resonator device 601.Notably, the inner edge of most inwardly extending portions of the firstbridge 607 and the cantilevered portion 608, and the filled secondbridge 610′ provides an acoustic impedance discontinuity, in essenceterminating the contacting overlap of the first electrode 103, thepiezoelectric layer 105 and the second electrode 106, which defines theactive region of the BAW resonator device 601. Notably, the dielectricmaterial provided in the filled second bridge 610′ has an acousticimpedance in order to provide significantly large lateral acousticimpedance discontinuity at the boundary of the active region of BAWresonator device 601. The mechanism of reducing losses in first bridge607, the cantilevered portion 608, and the filled second bridge 610′relies on suppression and confinement of the propagating eigenmodeswhich are mechanically excited at the perimeter of the active region ofthe BAW resonator device 601 as a part of piston mode excitation. Thefirst bridge 607, cantilevered portion 608 and the filled second bridge610′ provide mechanical discontinuities to control the phase of thereflected mode and to provide overall beneficial suppression of thepropagating eigenmodes in the active region.

The dielectric material used to fill the filled second bridge 610′ isselected to survive etching steps used to form various features of theBAW resonator device 601, such as the cavity 102. Illustratively, thedielectric material used to fill the filled second bridge 610′ comprisesone of non-etchable borosilicate glass (NEBSG), carbon doped silicondioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 6C is a cross-sectional view ofBAW resonator device 602, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 602are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503, 600˜601. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 6C, illustrative BAW resonator device 602 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 602.

Although not shown in FIG. 6C, the BAW resonator device 602 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 602, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a filled first bridge 607′ disposed along at least a portionof a perimeter along of an active region of the BAW resonator device602. The second electrode also comprise a filled cantilevered portion608′. The filled first bridge 607′ and the filled cantilevered portion608′ are filled with a dielectric material, and are disposed along atleast a portion of a perimeter along of an active region of the BAWresonator device 602. In combination, herein, the filled first bridge607′ and the filled cantilevered portion 608′ may be referred to as afilled first ring.

BAW resonator device 602 comprises filled second bridge 610′ disposed inthe first electrode 103. The filled second bridge 610′ is formed in thepiezoelectric layer 105, and between the first electrode 103 and thepiezoelectric layer 105. The filled second bridge 610′ is filled with adielectric material, and is disposed along at least a portion of aperimeter along of an active region of the BAW resonator device 602.

As depicted in FIG. 6C, the first electrode 103 terminates over thecavity 102 at a termination point 620, and the planarization layer 104extends over the cavity 102 to abut the first electrode 103 at thetermination point 620. As will be appreciated by one of ordinary skillin the art, if the first electrode terminated over the substrate 101,because the filled second bridge 610′ is filled with dielectricmaterial, acoustic waves would propagate through the filled secondbridge 610′ and into the substrate 101. Thus, the filled second bridge610′, would allow acoustic energy transfer into the substrate 101, whereit would be lost, resulting in a reduced Q-factor. By contrast, becausethe first electrode 103 terminates over the air-filled cavity, anacoustic impedance discontinuity, acoustic energy is reflected back intothe active region of the BAW resonator device 602.

Notably, the inner edge of most inwardly extending portions of thefilled first bridge 607′, the filled cantilevered portion 608′ and thefilled second bridge 610′ provide acoustic impedance discontinuities, inessence terminating the contacting overlap of the first electrode 103,the piezoelectric layer 105 and the second electrode 106, which definesthe active region of the BAW resonator device 602. Notably, thedielectric material provided in the filled first bridge 607′, the filledcantilevered portion 608′, and the filled second bridge 610′ has anacoustic impedance in order to provide significantly large lateralacoustic impedance discontinuity at the boundary of the active region ofBAW resonator device 602. The mechanism of reducing losses in the filledfirst bridge 607′, the filled cantilevered portion 608′, and the filledsecond bridge 610′ relies on suppression and confinement of thepropagating eigenmodes which are mechanically excited at the perimeterof the active region of the BAW resonator device 602 as a part of pistonmode excitation. The filled first bridge 607′, the filled cantileveredportion 608′ and the filled second bridge 610′ provide mechanicaldiscontinuities to control the phase of the reflected mode and toprovide overall beneficial suppression of the propagating eigenmodes inthe active region.

The dielectric material used to fill the filled first bridge 607′, thefilled cantilevered portion 608′, and the filled second bridge 610′ isselected to survive etching steps used to form various features of theBAW resonator device 602, such as the cavity 102. Illustratively, thedielectric material used to fill the filled first bridge 607′, thefilled cantilevered portion 608′, and the filled second bridge 610′comprises one of non-etchable borosilicate glass (NEBSG), carbon dopedsilicon dioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 6D is a cross-sectional view ofBAW resonator device 603, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 603are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503, and 600˜602. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 6D, illustrative BAW resonator device 603 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 603.

Although not shown in FIG. 6D, the BAW resonator device 603 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 603, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a filled first bridge 607′. The second electrode 106 alsocomprises a filled cantilevered portion 508′ (also known as a wing)disposed along at least one side, if not all sides exception theconnection side of the second electrode 106. The second electrode 106also comprises filled cantilevered portion 608′. The filled first bridge607′ and the filled cantilevered portion 608′ are filled with adielectric material, and are disposed along at least a portion of aperimeter along of an active region of the BAW resonator device 603. Incombination, the filled first bridge 607′ and the filled cantileveredportion 608′ may be referred to as a filled first ring.

BAW resonator device 603 comprises second bridge 610 disposed in thepiezoelectric layer 105 and between the piezoelectric layer 105 and thefirst electrode 103. The second bridge 610 is filled with air, and isdisposed along at least a portion of a perimeter along of an activeregion of the BAW resonator device 603. The second bridge may bereferred to as a second ring.

Notably, the inner edge of most inwardly extending portion of the filledfirst bridge 607′, the filled cantilevered portion 608′, and the secondbridge 610 provide acoustic impedance discontinuities, in essenceterminating the contacting overlap of the first electrode 103, thepiezoelectric layer 105 and the second electrode 106, which defines theactive region of the BAW resonator device 603. Notably, the dielectricmaterial provided in the filled first bridge 607′ and the filledcantilevered portion 608′, and the air provided in the second bridge 610each have an acoustic impedance in order to provide significantly largelateral acoustic impedance discontinuity at the boundary of the activeregion of BAW resonator device 603. The mechanism of reducing losses inthe filled first bridge 607′, the filled cantilevered portion 608′, andthe second bridge 610 relies on suppression and confinement of thepropagating eigenmodes which are mechanically excited at the perimeterof the active region of the BAW resonator device 603 as a part of pistonmode excitation. Both ends of each of the filled first bridge 607′, thefilled cantilevered portion 608′, and the second bridge 610 providemechanical discontinuities to control the phase of the reflected modeand to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled first bridge 607′ andthe filled cantilevered portion 608′ is selected to survive etchingsteps used to form various features of the BAW resonator device 603,such as the cavity 102, and second bridge 610. Illustratively, thedielectric material used to fill the filled first bridge 607′ and thefilled cantilevered portion 608′ comprises one of non-etchableborosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), orsilicon carbide (SiC).

According to various embodiments, FIG. 7A is a cross-sectional view ofBAW resonator device 700, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 700are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503 and 600˜603. Often, these details may not berepeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 7A, illustrative BAW resonator device 700 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 700.

Although not shown in FIG. 7A, the BAW resonator device 700 may alsocomprise a recessed frame element (sometimes referred to as an “innie”)and a raised frame element (sometimes referred to as an “outie”)provided in the second electrode 106. As is know, recessed frame elementand raised frame element provide an acoustic impedance mismatch thatserves to foster reflections of acoustic waves back into active regionof the BAW resonator device 700, reducing lost acoustic energy andimproving the Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a first bridge 707. The first bridge 707 is disposed along atleast a portion of a perimeter along of an active region of the BAWresonator device 700. The second electrode also comprise a firstcantilevered portion 708. The first bridge 707 and the firstcantilevered portion 708 are filled with air, and, in combination, maybe referred to as a first ring. The first bridge 707 and the firstcantilevered portion 708 may be formed at a mid-point of the thicknessof the second electrode 106, or elsewhere within the second electrode106.

BAW resonator device 700 comprises a second bridge 710 disposed in thefirst electrode 103. The second bridge 710 may be referred to as asecond ring. The second bridge 710 may be formed at a mid-point of thethickness of the first electrode 103, or elsewhere within the firstelectrode 103. The second bridge 710 is filled with air, and is disposedalong at least a portion of a perimeter along of an active region of theBAW resonator device 700. Notably, the inner edge of most inwardlyextending portions of the first bridge 707, the first cantileveredportion 708, and the second bridge 710 provide an acoustic impedancediscontinuity, in essence acoustically terminating the contactingoverlap of the first electrode 103, the piezoelectric layer 105 and thesecond electrode 106, which defines the active region of the BAWresonator device 700. As such, the inner edge of most inwardly extendingportions of the first bridge 707, the first cantilevered portion 708,and the second bridge 710 define the perimeter of the active region ofBAW resonator device 700.

According to various embodiments, FIG. 7B is a cross-sectional view ofBAW resonator device 701, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 701are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503, 600˜603 and 700. Often, these details may notbe repeated in order to avoid obscuring the description of the presentlydescribed representative embodiments.

Referring to FIG. 7B, illustrative BAW resonator device 701 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 701.

Although not shown in FIG. 7B, the BAW resonator device 701 may alsocomprise a recessed frame element (sometimes referred to as an “innie”)and a raised frame element (sometimes referred to as an “outie”)provided in the second electrode 106. As is know, a recessed frameelement and a raised frame element provide an acoustic impedancemismatch that serves to foster reflections of acoustic waves back intoactive region of the BAW resonator device 701, reducing lost acousticenergy and improving the Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises the first bridge 707 and the first cantilevered portion 708.The first bridge 707 and the first cantilevered portion 708 are disposedalong at least a portion of a perimeter along of an active region of theBAW resonator device 701, and may be referred to as a first ring. Thefirst bridge 707 and the first cantilevered portion 708 may each beformed at a mid-point of the thickness of the second electrode 106, orelsewhere within the second electrode 106.

BAW resonator device 701 comprises a filled second bridge 710′ disposedin the first electrode 103 and the piezoelectric layer 105. The filledsecond bridge 710′ may be referred to as a filled second ring. Thefilled second bridge 710′ may be formed at a mid-point of the thicknessof the first electrode 103, or elsewhere within the first electrode 103.The filled second bridge 710′ is filled with a dielectric material, andis disposed along at least a portion of a perimeter along of an activeregion of the BAW resonator device 701. Notably, inner edge of mostinwardly extending portions of the first bridge 707, the firstcantilevered portion 708, and the filled second bridge 710′ provide anacoustic impedance discontinuity, in essence terminating the contactingoverlap of the first electrode 103, the piezoelectric layer 105 and thesecond electrode 106, which defines the active region of the BAWresonator device 701. Notably, the dielectric material provided in thefilled second bridge 710′ has an acoustic impedance in order to providesignificantly large lateral acoustic impedance discontinuity at theboundary of the active region of BAW resonator device 701. The mechanismof reducing losses in first bridge 707, the first cantilevered portion708, and the filled second bridge 710′ relies on suppression andconfinement of the propagating eigenmodes, which are mechanicallyexcited at the perimeter of the active region of the BAW resonatordevice 701 as a part of piston mode excitation. The first bridge 707,the first cantilevered portion 708, and the filled second bridge 710′provide mechanical discontinuities to control the phase of the reflectedmode and to provide overall beneficial suppression of the propagatingeigenmodes in the active region.

The dielectric material used to fill the filled second bridge 710′ isselected to survive etching steps used to form various features of theBAW resonator device 701, such as the cavity 102. Illustratively, thedielectric material used to fill the filled second bridge 710′ comprisesone of non-etchable borosilicate glass (NEBSG), carbon doped silicondioxide (CDO), or silicon carbide (SiC).

As depicted in FIG. 7B, the first electrode 103 terminates over thecavity 102 at a termination point 720, and the planarization layer 104extends over the cavity 102 to abut the first electrode 103 at thetermination point 720. As will be appreciated by one of ordinary skillin the art, if the first electrode terminated over the substrate 101,because the filled second bridge 710′ is filled with dielectricmaterial, acoustic waves would propagate through the filled secondbridge 710′ and into the substrate 101. Thus, the filled second bridge710′, would allow acoustic energy transfer into the substrate 101, whereit would be lost, resulting in a reduced Q-factor. By contrast, becausethe first electrode 103 terminates over the air-filled cavity, anacoustic impedance discontinuity, acoustic energy is reflected back intothe active region of the BAW resonator device 701.

According to various embodiments, FIG. 7C is a cross-sectional view ofBAW resonator device 702, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 702are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503, 600˜603 and 700˜701. Often, these details maynot be repeated in order to avoid obscuring the description of thepresently described representative embodiments.

Referring to FIG. 7C, illustrative BAW resonator device 702 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 702.

Although not shown in FIG. 7C, the BAW resonator device 702 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 702, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises a filled first bridge 707′ disposed along at least a portionof a perimeter along of an active region of the BAW resonator device702. The second electrode also comprises a filled cantilevered portion708′. The filled first bridge 707′ and the filled cantilevered portion708′ are filled with a dielectric material, and is disposed along atleast a portion of a perimeter along of an active region of the BAWresonator device 702. The filled first bridge 707′ and the filledcantilevered portion 708′ may be formed at a mid-point of the thicknessof the second electrode 106, or elsewhere within the second electrode106. The filled first bridge 707′ and the filled cantilevered portion708′, in combination, may be referred to as a filled first ring.

BAW resonator device 702 comprises filled second bridge 710′ disposed inthe first electrode 103. The filled second bridge 710′ may be formed ata mid-point of the thickness of the first electrode 103, or elsewherewithin the first electrode 103. The filled second bridge 710′ is filledwith a dielectric material, and is disposed along at least a portion ofa perimeter along of an active region of the BAW resonator device 702.

As depicted in FIG. 7C, the first electrode 103 terminates over thecavity 102 at a termination point 720, and the planarization layer 104extends over the cavity 102 to abut the first electrode 103 at thetermination point 720. As will be appreciated by one of ordinary skillin the art, if the first electrode terminated over the substrate 101,because the filled second bridge 710′ is filled with dielectricmaterial, acoustic waves would propagate through the filled secondbridge 710′ and into the substrate 101. Thus, the filled second bridge710′, would allow acoustic energy transfer into the substrate 101, whereit would be lost, resulting in a reduced Q-factor. By contrast, becausethe first electrode 103 terminates over the air-filled cavity, anacoustic impedance discontinuity, acoustic energy is reflected back intothe active region of the BAW resonator device 502.

Notably, inner edge of most inwardly extending portions of the filledfirst bridge 707′, the filled cantilevered portion 708′, and the filledsecond bridge 710′ provide acoustic impedance discontinuities, inessence terminating the contacting overlap of the first electrode 103,the piezoelectric layer 105 and the second electrode 106, which definesthe active region of the BAW resonator device 702. Notably, thedielectric material provided in the filled first bridge 707′, the filledcantilevered portion 708′, and the filled second bridge 710′ has anacoustic impedance in order to provide significantly large lateralacoustic impedance discontinuity at the boundary of the active region ofBAW resonator device 702. The mechanism of reducing losses in the filledfirst bridge 707′, the filled cantilevered portion 708′, and the filledsecond bridge 710′ relies on suppression and confinement of thepropagating eigenmodes, which are mechanically excited at the perimeterof the active region of the BAW resonator device 702 as a part of pistonmode excitation. The filled first bridge 707′, the filled cantileveredportion 708′ and the filled second bridge 710′ provide mechanicaldiscontinuities to control the phase of the reflected mode and toprovide overall beneficial suppression of the propagating eigenmodes inthe active region.

The dielectric material used to fill the filled first bridge 707′, thefilled cantilevered portion 708′, and the filled second bridge 710′ isselected to survive etching steps used to form various features of theBAW resonator device 702, such as the cavity 102. Illustratively, thedielectric material used to fill the filled first bridge 707′, thefilled cantilevered portion 708′, and the filled second bridge 710′comprises one of non-etchable borosilicate glass (NEBSG), carbon dopedsilicon dioxide (CDO), or silicon carbide (SiC).

According to various embodiments, FIG. 7D is a cross-sectional view ofBAW resonator device 503, which includes a ring, according to arepresentative embodiment. Many details of the BAW resonator device 502are common to those of BAW resonator devices 100, 100′, 200˜203,300˜303, 400˜403, 500˜503, 600˜603 and 700˜702. Often, these details maynot be repeated in order to avoid obscuring the description of thepresently described representative embodiments.

Referring to FIG. 7D, illustrative BAW resonator device 703 includesacoustic stack formed over a substrate 101. In the depicted embodiment,the substrate 101 comprises a cavity 102 formed beneath an acousticstack to provide acoustic isolation, such that the acoustic stack issuspended over an air space to enable mechanical movement and acousticisolation. In alternative embodiments, the substrate 101 may be formedwith no cavity, for example, with an acoustic stack may be formed overan acoustic reflector such as a Distributed Bragg Reflector (e.g., asdepicted FIG. 1C), having alternating layers of high and low acousticimpedance materials, formed in the substrate 101.

Planarization layer 104 is provided over the substrate 101, beneath thepiezoelectric layer 105, and abutting a termination of the firstelectrode 103.

The second electrode 106 is provided over the piezoelectric layer 105.The acoustic stack comprises first electrode 103, piezoelectric layer105 and second electrode 106. As is known, a contacting overlap of thefirst electrode 103, the piezoelectric layer 105 and the secondelectrode 106 over the cavity 102 (or, as noted, other acousticreflector such as a distributed Bragg reflector) forms the active regionof the BAW resonator device 703.

Although not shown in FIG. 7D, the BAW resonator device 703 may alsocomprise recessed frame element (sometimes referred to as an “innie”)and raised frame element (sometimes referred to as an “outie”) providedin the second electrode 106. As is known, recessed frame element andraised frame element provide an acoustic impedance mismatch that servesto foster reflections of acoustic waves back into active region of theBAW resonator device 703, reducing lost acoustic energy and improvingthe Q-factor of the BAW resonator device.

The second electrode 106 may be connected on connection side thatcomprises filled first bridge 707′. The second electrode 106 alsocomprises the filled cantilevered portion 708′ The filled first bridge707′ and the filled cantilevered portion 708′, are filled with adielectric material, and are disposed along at least a portion of aperimeter along of an active region of the BAW resonator device 703. Thefilled first bridge 707′ and the filled cantilevered portion 708′ may beformed at a mid-point of the thickness of the second electrode 106, orelsewhere within the second electrode 106. The filled first bridge 707′and the filled cantilevered portion 708′, in combination, may bereferred to as a filled first ring.

BAW resonator device 703 comprises second bridge 710 disposed in thefirst electrode 103. The second bridge 710 is filled with air, and isdisposed along at least a portion of a perimeter along of an activeregion of the BAW resonator device 703. The second bridge 710 may beformed at a mid-point of the thickness of the first electrode 103, orelsewhere within the first electrode 103. The second bridge 710 may bereferred to as a second ring.

Notably, inner edge of most inwardly extending portions of the filledfirst bridge 707′, the filled cantilevered portion 708′, and the secondbridge 710 provide acoustic impedance discontinuities, in essenceterminating the contacting overlap of the first electrode 103, thepiezoelectric layer 105 and the second electrode 106, which defines theactive region of the BAW resonator device 703. Notably, the dielectricmaterial provided in the filled first bridge 707′, the filledcantilevered portion 708′, and the air provided in the second bridge 710each have an acoustic impedance in order to provide significantly largelateral acoustic impedance discontinuity at the boundary of the activeregion of BAW resonator device 703. The mechanism of reducing losses inthe filled first bridge 707′, the filled cantilevered portion 708′, andthe second bridge 710 relies on suppression and confinement of thepropagating eigenmodes which are mechanically excited at the perimeterof the active region of the BAW resonator device 703 as a part of pistonmode excitation. The filled first bridge 707′, the filled cantileveredportion 708′, and the second bridge 710 provide mechanicaldiscontinuities to control the phase of the reflected mode and toprovide overall beneficial suppression of the propagating eigenmodes inthe active region.

The dielectric material used to fill the filled first bridge 707′ isselected to survive etching steps used to form various features of theBAW resonator device 703, such as the cavity 102, and second bridge 710.Illustratively, the dielectric material used to fill the filled firstbridge 707′ comprises one of non-etchable borosilicate glass (NEBSG),carbon doped silicon dioxide (CDO), or silicon carbide (SiC).

The various components, materials, structures and parameters areincluded by way of illustration and example only and not in any limitingsense. For example, materials used to filled bridges 207′, 210′, 307′,310′, 407′, 410′, 507′, 510′, 607′, 610′, 707′ and 710′ inrepresentative embodiments depicted in FIGS. 2A, 2B, 2C, 3B, 3C, 3D, 4B,5B, 5C, 5D, 6B, 6C, 6D, 7B, 7C and 7D may be formed of metals withoutdeparting the scope of the present teachings. Illustrative metalsinclude, but are not limited to Iridium (Ir), Tungsten (W), Molybdenum(Mo), Niobium (Nb), Ruthenium (Ru), Aluminum (Al) and Copper (Cu), andalloys thereof. Notably, of course, the selected metal or metal alloyselected as the “fill” material for the filled bridges 207′, 210′, 307′,310′, 407′, 410′, 507′, 510′, 607′, 610′, 707′ and 710′ would bedifferent than the material used for the electrode in which the bridgeis provided. Also, various double-ring structures shown in FIGS. 1Athrough 7 may have inner edges aligned with each other, or may have theupper ring inner edge extending further into the active region of theacoustic resonator, or may have the lover ring inner edge extendingfurther into the active region of the acoustic resonator as depicted forillustrative purposes in the present teachings. In view of thisdisclosure, those skilled in the art can implement the present teachingsin determining their own applications and needed components, materials,structures and equipment to implement these applications, whileremaining within the scope of the appended claims.

1. A bulk acoustic wave (BAW) resonator device, comprising: a firstelectrode disposed over a substrate; a piezoelectric layer disposed overthe first electrode; a second electrode disposed over the piezoelectriclayer, wherein the second electrode further comprises a raised frameelement, or a recessed frame element, or both a raised frame element anda recessed frame element; and a ring disposed in either the firstelectrode, or in the second electrode, wherein the ring defines at leasta portion of a perimeter along of an active region of the BAW resonatordevice.
 2. A BAW resonator device as claimed in claim 1, wherein thering is a first ring, and the BAW resonator device further comprises asecond ring disposed in the second electrode.
 3. A BAW resonator deviceas claimed in claim 2, wherein the first ring, or the second ring, orboth the first and second rings are filled with air.
 4. A BAW resonatordevice as claimed in claim 2, wherein the first ring, or the secondring, or both the first and second rings are filled with a dielectricmaterial.
 5. A BAW resonator device as claimed in claim 4, wherein thedielectric material comprises one of non-etchable borosilicate glass(NEBSG), carbon doped silicon dioxide (CDO), or silicon carbide (SiC).6. A BAW resonator device as claimed in claim 2, wherein the first ringis filled with a dielectric material, and the first electrode terminatesover a cavity disposed in the substrate.
 7. A BAW resonator device asclaimed in claim 1, wherein the ring is a first ring, and the BAWresonator device further comprises a second ring disposed in thepiezoelectric layer.
 8. A BAW resonator device as claimed in claim 7,wherein the first ring, or the second ring, or both the first and secondrings are filled with air.
 9. A BAW resonator device as claimed in claim7, wherein the first ring, or the second ring, or both the first andsecond rings are filled with a dielectric material.
 10. A BAW resonatordevice as claimed in claim 7, wherein the first ring is filled with adielectric material, and the first electrode terminates over a cavitydisposed in the substrate.
 11. A BAW resonator device as claimed inclaim 7, wherein the first ring, or the second ring, or both the firstand second rings are filled with a metal or a metal alloy.
 12. A BAWresonator device as claimed in claim 11, wherein the metal comprises oneor more of Iridium (Ir), Tungsten (W), Molybdenum (Mo), Niobium (Nb),Ruthenium (Ru), Aluminum (Al), and Cooper (Cu).
 14. A bulk acoustic wave(BAW) resonator device, comprising: a first electrode disposed over asubstrate; a piezoelectric layer disposed over the first electrode; asecond electrode disposed over the piezoelectric layer; a first ringdisposed in either the first electrode, or in the second electrode; and15. A bulk acoustic wave (BAW) resonator device, comprising: a firstelectrode disposed over a substrate; a piezoelectric layer disposed overthe first electrode; a second electrode disposed over the piezoelectriclayer; and a passivation layer disposed over the second electrode,wherein a first ring exists between the second electrode and thepassivation layer, and a second ring exists in the piezoelectric layerand along at least a portion of an active region of the BAW resonatordevice.
 16. A BAW resonator device as claimed in claim 15, wherein thefirst ring, or the second ring, or both the first and second rings arefilled with a dielectric material.
 17. A BAW resonator device as claimedin claim 6, wherein the dielectric material comprises one ofnon-etchable borosilicate glass (NEBSG), carbon doped silicon dioxide(CDO), or silicon carbide (SiC).
 18. A BAW resonator device as claimedin claim 15, wherein the first ring is filled with a dielectricmaterial, and the first electrode terminates over a cavity disposed inthe substrate.
 19. A BAW resonator device as claimed in claim 15,wherein the first ring, or the second ring, or both the first and secondrings are filled with a metal or a metal alloy.
 20. A BAW resonatordevice as claimed in claim 19, wherein the metal comprises one or moreof Iridium (Ir), Tungsten (W), Molybdenum (Mo), Niobium (Nb), Ruthenium(Ru), Aluminum (Al), and Cooper (Cu).